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Porous etching: A means to enhance the photoresponse of indirect semiconductors
Author(s) -
Erné Ben H.,
Vanmaekelbergh Daniël,
Kelly John J.
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070813
Subject(s) - materials science , semiconductor , etching (microfabrication) , optoelectronics , layer (electronics) , porosity , crystallite , porous medium , nanotechnology , composite material , metallurgy
A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining.