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Synthesis and compositional tuning of the band properties of isostructural TMA–SnS x Se 1–x −1 Nanoporous Materials
Author(s) -
Ahari Homayoun,
Ozin Geoffrey A.,
Bedard Robert L.,
Petrov Srebri,
Young David
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070404
Subject(s) - nanoporous , isostructural , materials science , chalcogenide , band gap , tin , selenium , nanotechnology , chemical engineering , optoelectronics , crystallography , crystal structure , metallurgy , chemistry , engineering
Crystalline, nanoporous tin chalcogenide semiconducting materials (see Figure) in which the band gap can be fine tuned chemically are reported. Variation of the proportions of slfur and selenium in the title materials results in the absorpton maxima red shifting with increasing selenium content over a range of 100 nm (350–450 nm).