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Transition metal oxide films
Author(s) -
Uekawa Naofumi,
Kaneko Katsumi
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070315
Subject(s) - materials science , valence (chemistry) , oxide , transition metal , doping , metal , thin film , homogeneous , phase transition , chemical engineering , chemical physics , nanotechnology , inorganic chemistry , metallurgy , condensed matter physics , catalysis , optoelectronics , thermodynamics , biochemistry , chemistry , physics , quantum mechanics , engineering
The sol‐gel method can be used to produce multicomponent oxide materials which have a homogeneous composition even at the atomic level. Thin transition metal oxide films are shown to exhibit different properties from those of the bulk materials and both the crystal structure and the valence state of the materials can be sensitively controlled by doping. Recent progress in the field is reviewed, including the production of highly oriented films, valence‐controlled oxides, the control of instable phase formation and atmosphere‐sensitive structural transformations.