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Microwave‐assisted synthesis of aluminum nitride
Author(s) -
Ramesh Peelamedu D.,
Rao Kalva J.
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070217
Subject(s) - materials science , nitride , ceramic , microwave , thermal conductivity , dielectric , aluminium , electronics , optoelectronics , nanotechnology , thermal , composite material , electrical engineering , telecommunications , physics , layer (electronics) , engineering , meteorology , computer science
Aluminum nitride is an important ad high‐cost ceramic materials used in the electronics industry due to its combination of thermal conductivity, high strength; low thermal expansivity, and low dielectric constant. A new, simple and attractive route to sbmicrometer AlN powder (see Figure) is reported based on the use of microwave radiation.