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CVD of Covalent Compounds and high‐ T c superconductors
Author(s) -
GómezAleixandre Cristina,
Sanchez Olga,
Albella José M.,
Santiso José,
Figueras Albert
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070203
Subject(s) - materials science , chemical vapor deposition , boron nitride , covalent bond , crystallinity , superconductivity , epitaxy , diamond , deposition (geology) , ceramic , nitride , boron , nanotechnology , chemical engineering , metallurgy , condensed matter physics , composite material , organic chemistry , chemistry , paleontology , physics , layer (electronics) , sediment , engineering , biology
Chemical vapor deposition at high temperatures provided the deposited atoms with the necessary surface mobility to ensure crystallinity and epitaxial growth. The use of high‐temperaure CVD in the deposition of high‐ T c superconducting ceramics and covalent materials such as diamond (see Figure) and boron nitride is reviewed, and, for example, the methods used to maintain the terahedral arrangement of neighboring atoms during deposition discussed.