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III–V based diluted magnetic semi conductors: Carrier–induced magnetism
Author(s) -
Munekata Hiro
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070119
Subject(s) - magnetism , materials science , magnetic semiconductor , semiconductor , condensed matter physics , epitaxy , magnetic field , electrical conductor , optoelectronics , nanotechnology , physics , composite material , layer (electronics) , quantum mechanics
Magnetism in III–V semiconductors is a comparatively new area of study: the first III–V based diluted magnetic semiconductors were produced in epitaxial films of (In, Mn)As grown on GaAs(100) substrates in 1989. An account is given of the magnetic behavior of these novel semi‐magnetic alloys at various carrier concentrations. Finally, magneto‐optical devices are presented in which the control of the carrier concentration by an electric field results in the manipulation of magnetic properties.