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Imaging the surfaces of nanoporous semiconductors by atomic force microscopy
Author(s) -
Enzel Patricia,
Henderson Grant S.,
Ozin Geoffrey A.,
Bedard Robert L.
Publication year - 1995
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19950070115
Subject(s) - nanoporous , materials science , tin , kelvin probe force microscope , atomic force microscopy , semiconductor , porosity , nanotechnology , conductive atomic force microscopy , microscopy , porous medium , chemical engineering , composite material , optoelectronics , optics , metallurgy , physics , engineering
Open framework semiconductors tin(IV) sulfides and tin(IV) selenides) exhibiting bulk crystalline nanoporosity have been studied using atomic force microscopy (AFM). The bulk porosity is reflected in the surface structures of these materials (see Fig.), and little reconstruction can be detected, important points in the assessment of the electrical transport characteristics of this new class of nanoporous materials.