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Synthesis, X‐ray structure and application of bis[allylamine(dimethyl)gallium(III)] as a precursor for the growth of GaP layers by MOVPE
Author(s) -
Schumann Herbert,
Just Oliver,
Nickel Siegbert,
Weimann Roman,
Gottschalch Volker,
Keller Bernd P.,
Schwabe Reinhard
Publication year - 1994
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19940061012
Subject(s) - gallium , materials science , allylamine , metalorganic vapour phase epitaxy , gallium oxide , gallium phosphide , doping , nanotechnology , epitaxy , layer (electronics) , metallurgy , composite material , optoelectronics , polyelectrolyte , polymer
Gallium precursors for the growth of gallium‐based materials from the vapor phase still need to be improved in terms of their safety and handling properties, especially with respect to their pyrophoricity, air and moisture sensitivity, and toxicity. A new gallium precursor is reported, the first diorganogalliumamine, which exhibits a more favorable safety profile, and its use in the preparation of N‐doped GaP is discussed.