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MOCVD Routes to Thin Metal Oxide Films for superconducting electronics
Author(s) -
Schulz Douglas L.,
Marks Tobin J.
Publication year - 1994
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19940061003
Subject(s) - materials science , metalorganic vapour phase epitaxy , microelectronics , chemical vapor deposition , thin film , superconductivity , oxide , electronics , nanotechnology , metal , optoelectronics , deposition (geology) , epitaxy , layer (electronics) , electrical engineering , metallurgy , paleontology , physics , engineering , quantum mechanics , sediment , biology
Superconducting, semiconducting and insulating oxide thin films are of interest for applications as active and passive components in microelectronic device technologies. Metal organic chemical vapor deposition (MOCVD) is an important method of thin film production and its use in developing device structures such as that in the figure is discussed.