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The formation of silicon carbide films from disilane derivatives
Author(s) -
Hengge Edwin,
Zechmann Arno,
Hofer Ferdinand,
Pölt Peter,
Lux Benno,
Danzinger Michael,
Haubner Roland
Publication year - 1994
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19940060713
Subject(s) - disilane , silicon carbide , materials science , chemical vapor deposition , silicon , carbide , chemical engineering , deposition (geology) , nanotechnology , optoelectronics , composite material , engineering , paleontology , sediment , biology
The formation of silicon carbide films presents problems arising from the fact that the precursors employed are usually a mixture of compounds. It is demonstrated that high‐quality silicon carbide films (see Figure) can be produced by chemical vapor deposition using easily available disilane derivatives as the precursor.