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Tuning Schottky Barriers by atomic layer control at metal—semiconductor interfaces
Author(s) -
Flores Fernando,
Miranda Rodolfo
Publication year - 1994
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19940060704
Subject(s) - ohmic contact , materials science , schottky diode , schottky barrier , semiconductor , heterojunction , dangling bond , optoelectronics , layer (electronics) , metal , nanotechnology , engineering physics , silicon , diode , engineering , metallurgy
Metal‐semiconductor contacts are essentially of two kinds : ohmic contacts and Schottky barriers. The physics governing the formation of metalsemiconductor Schottky barriers–which are the basis of most electronic devices–and ways of tuning their height are reviewed, concentrating on the theory. It is shown that tuning can be achieved by modifying the interface geometry, by modifying the surface dangling bonds, or, in the case of heterojunction interfaces, by the addition of an interlayer. Directions for (experimental) future research are suggested.