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The deposition of aluminum nitride thin films by metal‐organic CVD—an alternative precursor system
Author(s) -
Jones Anthony C.,
Auld John,
Rushworth Simon A.,
Williams Edward W.,
Haycock Peter W.,
Tang Chiu C.,
Critchlow Gary W.
Publication year - 1994
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19940060310
Subject(s) - materials science , nitride , thin film , chemical vapor deposition , aluminium , substrate (aquarium) , deposition (geology) , metal , nanotechnology , optoelectronics , composite material , metallurgy , layer (electronics) , paleontology , oceanography , sediment , geology , biology
Thin films of aluminum nitride have applications in magnetooptic multilayer structures. Methods must therefore be developed for depositing thin films of this commercially important material at low to moderate substrate temperatures. Conventional CVD riquires a high substrate. The preliminary results presented here show that AIN films grown by metalorganic CVD using Me 3 Al combined with either tertiary butylamine of isoproplamine, a technique avoiding the above problems, are of sufficient quality for magnetooptical applications. A possible deposition mechanism is proposed.