Premium
The multiple tunnel junction and its application to single‐electron memories
Author(s) -
Nakazato Kazuo,
Ahmed Haroon
Publication year - 1993
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19930050917
Subject(s) - materials science , fabrication , tunnel magnetoresistance , optoelectronics , power consumption , semiconductor , tunnel junction , electronic circuit , electron , semiconductor device , nanotechnology , engineering physics , power (physics) , electrical engineering , quantum tunnelling , engineering , physics , layer (electronics) , pathology , quantum mechanics , medicine , alternative medicine
Single‐electron memories and single‐electron logic circuits are two devices that can be constructed from multiple tunnel junctions (MTJs). The electrical characteristics of this basic building block are described, and the fabrication of very small MTJ devices is outlined. The simple structure of the MTJ and the low power consumption and small size of MTJ devices could open up a new era in electron device technology, with devices being constructed from materials completely different from those used in the present semiconductor industry.