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Semiconductor nanowhiskers
Author(s) -
Yazawa Masamitsu,
Koguchi Masanari,
Muto Akiko,
Hiruma Kenji
Publication year - 1993
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19930050715
Subject(s) - materials science , whiskers , molecular beam epitaxy , nanotechnology , heterojunction , indium , nanostructure , indium arsenide , optoelectronics , semiconductor , epitaxy , quantum dot , composite material , layer (electronics)
Self‐assembled nanostructures based on indium arsenide whiskers grown using molecular beam epitaxy and metal‐organic vapor phase epitaxy (see Figure) could be of use as lead wires, connecting devices in integrated nanodevices. The procedure employed to produce these features in a controlled way is described, and the possibilities of developing nanowhisker heterojunctions discussed.