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Atomic layer passivation of GaAs surfaces using InP related compounds
Author(s) -
Wada Kazumi,
Wada Yoshinori
Publication year - 1993
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19930050312
Subject(s) - passivation , materials science , layer (electronics) , atomic layer deposition , optoelectronics , degradation (telecommunications) , deposition (geology) , carrier lifetime , sulfur , nanotechnology , silicon , electronic engineering , metallurgy , engineering , biology , paleontology , sediment
Passivation of GaAs surfaces has the important function of reducing the loss of carriers by recombination at surfaces and interfaces. This prevents degradation of the characteristics of minority‐carrier injection devices and extends the device lifetime. The new method of surface passivation reported here—the deposition of a few atomic layers of InP related compounds—can replace the far from satisfactory sulfur treatment used so far.