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Computer‐Aided Materials Design for semiconductors
Author(s) -
Ito Tomonori,
Ohno Takahisa,
Shiraishi Kenji,
Yamaguchi Eiichi
Publication year - 1993
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19930050308
Subject(s) - materials science , semiconductor , pseudopotential , passivation , superlattice , germanium , semiconductor materials , range (aeronautics) , optoelectronics , engineering physics , nanotechnology , silicon , condensed matter physics , physics , layer (electronics) , composite material
Computer‐aided materials design for semiconductors is reviewed. Reliable predictions are possible for a wide range of problems, such as the behavior of various heterovalent atomic species in III‐V semiconductors, including C (conduction type), Si (DX‐center), Ge (GaAs/Ge superlattices), S, Se and Te (passivation of GaAs surfaces), by using such computer‐aided calculation techniques as pseudopotential methods.