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Direct synthesis of semiconductor quantum‐wire and quantum‐dot structures
Author(s) -
Nötzel Richard,
Ploog Klaus H.
Publication year - 1993
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19930050104
Subject(s) - materials science , quantum dot , molecular beam epitaxy , heterojunction , semiconductor , optoelectronics , quantum wire , fabrication , characterization (materials science) , electron , quantum well , transistor , epitaxy , quantum point contact , nanotechnology , physics , optics , quantum mechanics , medicine , laser , alternative medicine , layer (electronics) , pathology , voltage
The quantum confinement of electrons and holes in low‐dimensional semiconductor structures strongly influences the properties of “quantum wires and dots” and therefore has an important impact on the performance of high‐speed electron and optoelectronic devices. The fabrication of such structures using, for example, molecular beam epitaxy and metal–organic vapor phase epitaxy, their characterization, and their use in heterojunctions, quantum wells, and high electron mobility transistors are reviewed.