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Ferroelectric thin films
Author(s) -
Tossell David A.,
Patel Anil
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920041212
Subject(s) - materials science , thin film , pyroelectricity , wafer , ferroelectricity , sputtering , optoelectronics , silicon , phase (matter) , nanotechnology , dielectric , chemistry , organic chemistry
Lead‐based ferroelectric thin films have many potential pyroelectric and electro‐optic applications. Thin‐film‐based devices are very likely to replace their bulk wafer counterparts within the next few years, particularly where full integration with silicon technology becomes feasible. The sol‐gel route is shown to produce PST films with properties approaching those of the bulk, and dual ion beam sputtering is demonstrated to have the capability of significantly affecting the film density, stoichiometry, morphology and even the crystalline phase during the growth of PLZT thin films.