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Diagnostics and modeling of silane and methane Plasma CVD Processes
Author(s) -
Davies Paul B.,
Martineau Philip M.
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920041104
Subject(s) - silane , chemical vapor deposition , materials science , deposition (geology) , plasma enhanced chemical vapor deposition , plasma , silicon , chemical engineering , methane , diamond , amorphous silicon , nanotechnology , amorphous solid , optoelectronics , crystalline silicon , composite material , organic chemistry , chemistry , paleontology , physics , quantum mechanics , sediment , engineering , biology
The deposition of hydrogenated amorphous silicon and diamond can be achieved using plasma‐enhanced chemical vapor deposition. In order to optimize the deposition process and thus the property profiles of the materials obtained it is important that the gas‐phase and surface reactions are understood. The modeling methods and the diagnostic techniques used to follow the processes involved are reviewed and the plasma chemistry of diamond and amorphous silicon deposition compared.