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New routes to Cu‐patterned teflon substrates
Author(s) -
HampdenSmith Mark J.,
Kodas Toivo T.,
Rye Robert R.
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920040718
Subject(s) - materials science , microelectronics , copper , dielectric , electrical conductor , etching (microfabrication) , conductivity , deposition (geology) , adhesion , composite material , nanotechnology , electrical resistivity and conductivity , optoelectronics , metallurgy , layer (electronics) , electrical engineering , paleontology , chemistry , engineering , sediment , biology
In microelectronics, copper conductors and Teflon substrates are the materials of choice in many applications due to the high conductivity of copper and the low dielectric constant of Teflon. The nature of Teflon, however, results in low adhesion strength, which makes a multi‐step Cu‐deposition process necessary. Here, an alternative, selective CVD, which can produce smaller feature sizes and reduces the need for wet etching, is presented and explained.