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Ab‐Initio computer modeling of semiconductor surfaces
Author(s) -
Srivastava Gyaneshwar P.,
Jones Bob
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920040706
Subject(s) - semiconductor , materials science , ab initio , infrared , electronics , atomic units , semiconductor device , nanotechnology , optoelectronics , chemistry , quantum mechanics , physics , layer (electronics)
The equilibrium atomic structure of semiconductor surfaces , their electronics states and vibrational properties can be calculated using ab‐initio theoretical methods. The difference in the surface as opposed to the bulk properties of semiconductors is one of the reasons for their usefulness in, for example, infrared detectors or very large scale integrated (VLSI) circuits. The applications of the theoretical methods are discussed and their agreement with experiment assessed.