Premium
Hydrogen in Semiconductors: Crystal growth and device processing
Author(s) -
Pearton Stephen,
Stavola Michael,
Corbett James W.
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920040503
Subject(s) - materials science , dopant , passivation , hydrogen , doping , semiconductor , reagent , nanotechnology , optoelectronics , chemistry , organic chemistry , layer (electronics)
The effects of unintentional hydrogen incorporation into both Si and III‐V materials during processing is likely to become more important as device dimensions are scaled down and even tighter control is required on the doping densities within the active and contact regions. Since hydrogen is a constituent of virtually every chemical reagent or gas that is used in semiconductor processing it is almost impossible to avoid near‐surface dopant passivation occurring during some of the processing steps. However, relatively low‐temperature heat treatments are effective in reactivating these dopants.