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Defect Spectroscopy in semiconductors
Author(s) -
Grimmeiss Hermann G.,
Kleverman Mats
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920040403
Subject(s) - materials science , characterization (materials science) , semiconductor , charge carrier , nanotechnology , semiconductor materials , compound semiconductor , spectroscopy , optoelectronics , physics , epitaxy , layer (electronics) , quantum mechanics
Defects in semiconductors are used to control the concentration and lifetime of charge carriers which in turn determine the properties of the materials. The identification and characterization of the deficts is therefore of utmost importance. The various experimental techniques, including junction space‐charge techniques are briefly introduced before some recent highlights from work on II‐ ‐VI, III–V, and IV–IV compound semiconductors, based on the combination of several characterization methods are presented.