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Hexafluoroacetone in resist chemistry
Author(s) -
Przybilla Klaus J.,
Röschert Horst,
Pawlowski Georg
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920040318
Subject(s) - resist , lithography , photoresist , materials science , nanotechnology , fabrication , photolithography , hexafluoroacetone , optoelectronics , medicine , alternative medicine , layer (electronics) , pathology , composite material
Photo‐and radiation‐sensitive materials are used are resists in the fabrication of memory and logic devices. The 64 MB DRAMs, scchedules for 1995, will requre feature sizes below 0.5 μm (see figure). Deep‐UV lithography is a promising method of achieving these targets meaning that new resists with faovrable transmission and bleaching characteristics in this spectral region are required.