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Preparation‐dependent rectification behavior of lead sulfide particulate films
Author(s) -
Zhao Xiao Kang,
McCormick Larry D.,
Fendler Janos H.
Publication year - 1992
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19920040206
Subject(s) - arachidic acid , monolayer , materials science , aqueous solution , lead sulfide , characterization (materials science) , particulates , chemical engineering , sulfide , semiconductor , rectification , nanotechnology , inorganic chemistry , organic chemistry , chemistry , metallurgy , optoelectronics , power (physics) , physics , quantum mechanics , engineering , quantum dot , langmuir–blodgett film
Semiconductor particulate films , exhibiting either p‐type or n‐type behavior, have been produced by varying the synthetic method. Infusion of NH 3 into arachidic acid (AA) monolayers floating on an aqueous solution of Pb(NO 3 ) 2 and CS(NH 2) 2 results in p‐type films while the infusion of H 2 S into AA monolayers on aqqueous Pb(NO 3 ) 2 results in n‐type films. The preparation and characterization of the films are described.