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Silicon molecular beam epitaxy
Author(s) -
Gravesteijn Dirk J.,
van De Walle Gerjan F. A.,
van Gorkum Aart A.
Publication year - 1991
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19910030705
Subject(s) - molecular beam epitaxy , materials science , superlattice , heterojunction , doping , optoelectronics , silicon , field effect transistor , epitaxy , transistor , nanotechnology , layer (electronics) , voltage , electrical engineering , engineering
Recent results in the field of silicon molecular beam epitaxy (SiMBE) are reviewed. Emphasis is put on the possibility of doping‐profile engineering, as in delta‐doped layers. Heteroepitaxy of Si 1 −x Ge x on Si is discussed in detail. Due to the band‐gap narrowing in the Si 1 −x Ge x several improved devices can be designed, such as heterojunction bipolar transistors and modulation‐doped structures which show potential for improved field‐effect transistors. An exciting area of research involves superlattices consisting of repetitions of layers of Si and Ge, each with a thickness of only a few atomic layers.