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Selective low‐temperature chemical vapor deposition of copper from (hexafluoroacetylacetonato)copper(I)trimethylphosphine, (hfa)CuP(Me) 3
Author(s) -
Kodas Toivo T.,
Shin H.K.,
Chi K.M.,
HampdenSmith Mark J.,
Farr John D.,
Paffett Mark
Publication year - 1991
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19910030506
Subject(s) - copper , disproportionation , materials science , chemical vapor deposition , thermal decomposition , deposition (geology) , substrate (aquarium) , electrical resistivity and conductivity , thin film , chemical engineering , epitaxy , inorganic chemistry , metallurgy , nanotechnology , organic chemistry , chemistry , layer (electronics) , catalysis , paleontology , oceanography , engineering , sediment , geology , electrical engineering , biology
Communication: The deposition of smooth, dense, fine‐grained, low resistivity copper films has been achieved at temperatures as low as 150°C from an organometallic precursor. It is suggested that the films (see figure) are formed as the result of thermal disproportionation of the precursor without decomposition of the ligand. Substrate‐selective deposition at rates of over 1000 Åμmin is demonstrated.