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Atomic sites of a bare surface modified with the tunneling microscope
Author(s) -
Fuchs Harald,
Schimmel Thomas
Publication year - 1991
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19910030212
Subject(s) - atomic units , scanning tunneling microscope , materials science , semiconductor , quantum tunnelling , atomic force microscopy , atomic diffusion , surface (topology) , nanotechnology , chemical physics , optoelectronics , crystallography , physics , chemistry , geometry , mathematics , quantum mechanics
Research News: The reproducible direct labeling of atomic sites on a semiconductor surface at room temperature and under ambient conditions has recently been reported for the first time. The STM method used, which results in an increase in the apparent height of the atomic positions but not in the formation of other defects such as dislocations, could have significant technological relevance, for example for the storage of digital information on the atomic scale.