Premium
Surface analysis III . Planar array of atomic scale tunneling diodes
Author(s) -
Rabe Jürgen P.
Publication year - 1990
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19900020508
Subject(s) - materials science , atomic units , scanning tunneling microscope , planar , diode , silicon , quantum tunnelling , doping , surface (topology) , optoelectronics , boron , nanotechnology , electrochemical scanning tunneling microscope , scanning tunneling spectroscopy , engineering physics , physics , computer science , geometry , computer graphics (images) , mathematics , quantum mechanics , nuclear physics
Surface Analysis III : The recent demonstration of the tunneldiode effect on an atomic scale forms the basis of this article which also looks at the overall trends towards miniaturazation of devices down to the atomic scale. The latest achievement is based on the ability of the scanning tunneling microscope (STM) to image regions of negative differential conductivity on the surface of boron doped silicon.