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Low temperature deposition of a CaF 2 insulator layer on GaAs
Author(s) -
Vere A. W.,
Mackey K. J.,
Rodway D. C.,
Smith P. C.,
Frigo D. M.,
Bradley D. C.
Publication year - 1989
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19890011109
Subject(s) - materials science , epitaxy , insulator (electricity) , optoelectronics , semiconductor , thin film , layer (electronics) , lattice (music) , nanotechnology , physics , acoustics
Multilayer semiconductor‐insulator structures composed of epitaxially grown layers of, for example, GaAs and CaF, have been the subject of widespread interest in recent years. The methods used to overcome lattice mismatch problems in order to obtain high quality insulator thin films are discussed along with photochemical decomposition methods for their production at low temperatures.