Premium
Tailoring Semiconductor Crystal to atomic dimensions
Author(s) -
Joyce Bruce A.
Publication year - 1989
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.19890010805
Subject(s) - molecular beam epitaxy , materials science , semiconductor , crystal growth , diffraction , curse of dimensionality , crystal (programming language) , chemical physics , electron diffraction , nanotechnology , quantum dot , engineering physics , condensed matter physics , optoelectronics , epitaxy , crystallography , optics , physics , chemistry , programming language , layer (electronics) , machine learning , computer science
This article provides an introduction to the growth by molecular beam epitaxy (MBE) of semiconductor structures which have dimensions of the same order as interatomic distances in solids. The basic process technology is first described, followed by a brief account of surface reaction mechanisms involved in the growth of GaAs from an atomic beam of Ga and molecular beams of As 4 and As 2 . From the study of growth dynamics using electron diffraction techniques it is shown how reduced dimensionality structures can be grown and some indication is given of the effects of quantum confinement on material properties. Finally, some recent modifications of MBE based on flux interruption are described.