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Molecular Doping Enabling Mobility Boosting of 2D Sn 2+ ‐Based Perovskites (Adv. Funct. Mater. 38/2022)
Author(s) -
Reo Youjin,
Zhu Huihui,
Liu Ao,
Noh YongYoung
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202270211
Subject(s) - materials science , doping , dopant , perovskite (structure) , halide , electron mobility , boosting (machine learning) , charge carrier , charge (physics) , optoelectronics , nanotechnology , chemical engineering , inorganic chemistry , chemistry , physics , machine learning , computer science , engineering , quantum mechanics
2D Sn 2+ ‐Based Perovskites In article number 2204870, Yong‐Young Noh and co‐workers demonstrate the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high‐efficiency optoelectronic devices. A thin p‐type dopant layer, F4‐TCNQ and MoO 3 , deposited using thermal evaporation improves the control of damage‐free electronic doping. The efficient charge transfer without deterioration of the perovskite microstructure improves the Hall mobility up to 100 cm 2 V −1 s −1 .