Field‐Free Switching of Magnetization by Tilting the Perpendicular Magnetic Anisotropy of Gd/Co Multilayers (Adv. Funct. Mater. 26/2022) | Zendy

Kim HyunJoong | Zendy; Moon KyoungWoong | Zendy; Tran Bao Xuan | Zendy; Yoon Seongsoo | Zendy; Kim Changsoo | Zendy; Yang Seungmo | Zendy; Ha JaeHyun | Zendy; An Kyongmo | Zendy; Ju TaeSeong | Zendy; Hong JungIl | Zendy; Hwang Chanyong | Zendy

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Field‐Free Switching of Magnetization by Tilting the Perpendicular Magnetic Anisotropy of Gd/Co Multilayers (Adv. Funct. Mater. 26/2022)

Author(s) -

Kim HyunJoong,

Moon KyoungWoong,

Tran Bao Xuan,

Yoon Seongsoo,

Kim Changsoo,

Yang Seungmo,

Ha JaeHyun,

An Kyongmo,

Ju TaeSeong,

Hong JungIl,

Hwang Chanyong

Publication year - 2022

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.202270153

Subject(s) - condensed matter physics , materials science , ferrimagnetism , magnetic anisotropy , magnetization , perpendicular , anisotropy , magnetic field , amorphous solid , magnetoresistive random access memory , field (mathematics) , physics , random access memory , optics , crystallography , chemistry , geometry , mathematics , quantum mechanics , pure mathematics , computer science , computer hardware

Field‐Free Switching In article number 2112561, Jung‐Il Hong, Chanyong Hwang, and co‐workers demonstrate field‐free spin‐orbit torque switching of perpendicular magnetization in amorphous and ferrimagnetic Gd/Co multilayers accompanied by a tilted magnetic anisotropy axis. This tilted anisotropy could facilitate the development of magnetic memory and logic devices without the need for external application of a global magnetic field or manufacturing complex magnetic structures to induce symmetry breaking.

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