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Field‐Free Switching of Magnetization by Tilting the Perpendicular Magnetic Anisotropy of Gd/Co Multilayers (Adv. Funct. Mater. 26/2022)
Author(s) -
Kim HyunJoong,
Moon KyoungWoong,
Tran Bao Xuan,
Yoon Seongsoo,
Kim Changsoo,
Yang Seungmo,
Ha JaeHyun,
An Kyongmo,
Ju TaeSeong,
Hong JungIl,
Hwang Chanyong
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202270153
Subject(s) - condensed matter physics , materials science , ferrimagnetism , magnetic anisotropy , magnetization , perpendicular , anisotropy , magnetic field , amorphous solid , magnetoresistive random access memory , field (mathematics) , physics , random access memory , optics , crystallography , chemistry , geometry , mathematics , quantum mechanics , pure mathematics , computer science , computer hardware
Field‐Free Switching In article number 2112561, Jung‐Il Hong, Chanyong Hwang, and co‐workers demonstrate field‐free spin‐orbit torque switching of perpendicular magnetization in amorphous and ferrimagnetic Gd/Co multilayers accompanied by a tilted magnetic anisotropy axis. This tilted anisotropy could facilitate the development of magnetic memory and logic devices without the need for external application of a global magnetic field or manufacturing complex magnetic structures to induce symmetry breaking.