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Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates (Adv. Funct. Mater. 14/2022)
Author(s) -
Liu Danshuo,
Hu Lin,
Yang Xuelin,
Zhang Zhihong,
Yu Haodong,
Zheng Fawei,
Feng Yuxia,
Wei Jiaqi,
Cai Zidong,
Chen Zhenghao,
Ma Cheng,
Xu Fujun,
Wang Xinqiang,
Ge Weikun,
Liu Kaihui,
Huang Bing,
Shen Bo
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202270085
Subject(s) - materials science , polarization (electrochemistry) , semiconductor , optoelectronics , nanotechnology , chemistry
Arbitrary Substrates In article number 2113211, Xuelin Yang, Bing Huang, Bo Shen, and co‐workers propose a strategy of polarization‐driven‐orientation selective growth and demonstrate that single‐crystalline GaN can in principle be achieved on polycrystalline diamond or other substrates by utilizing a composed buffer layer consisting of graphene and polycrystalline physical‐vapor‐deposited AlN. This strategy can be extended to the growth of any emergent single‐crystalline semiconductor films on any arbitrary freestanding substrates by choosing appropriate 2D materials with matched crystal structures.