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High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene (Adv. Funct. Mater. 12/2022)
Author(s) -
Melianas Armantas,
Kang MinA,
VahidMohammadi Armin,
Quill Tyler James,
Tian Weiqian,
Gogotsi Yury,
Salleo Alberto,
Hamedi Mahiar Max
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202270071
Subject(s) - materials science , neuromorphic engineering , memristor , transistor , ionic bonding , resistive touchscreen , resistive random access memory , optoelectronics , nanotechnology , electrical engineering , computer science , ion , voltage , artificial neural network , artificial intelligence , physics , quantum mechanics , engineering
Analog Resistive Memories In article number 2109970, Armantas Melianas, Armin VahidMohammadi, Alberto Salleo, Mahiar Max Hamedi, and co‐workers present the world's first electrochemical transistor memory based on 2D materials (MXene). These transistors can be used for neuromorphic computers, where they are a thousand times faster than previous ionic memories and other state‐of‐the‐art technologies like resistive‐ or phase‐change memristors (Image credit: Armin VahidMohammadi).