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The Hidden Potential of Polysilsesquioxane for High‐ k : Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device (Adv. Funct. Mater. 7/2022)
Author(s) -
Ye Heqing,
Kwon Hyeokjin,
Shin Su Cheol,
Lee Hwiyoung,
Park Young Ho,
Tang Xiaowu,
Wang Ruxian,
Lee Kanghyuck,
Hong Jisu,
Li Zhijun,
Jeong Wonkyo,
Kim Jiyeong,
Park Chan Eon,
Lee Jihoon,
An Tae Kyu,
In Insik,
Kim Se Hyun
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202270042
Subject(s) - materials science , realization (probability) , dielectric , electronics , nanotechnology , voltage , optoelectronics , unit (ring theory) , high voltage , work (physics) , engineering physics , electrical engineering , mechanical engineering , engineering , statistics , mathematics education , mathematics
Logic Devices In article number 2104030, Jihoon Lee, Tae Kyu An, Insik In, Se Hyun Kim, and co‐workers design a fancy strategy for the realization of high‐k polysilsesquioxane materials and apply these materials to low‐voltage operating unit and integrated devices. This work has inspired research towards the further development of practical organic electronics by providing methods for fabricating high‐k dielectrics with various types of polymeric materials.