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Imaging Dielectric Breakdown in Valence Change Memory (Adv. Funct. Mater. 2/2022)
Author(s) -
Hubbard William A.,
Lodico Jared J.,
Chan Ho Leung,
Mecklenburg Matthew,
Regan Brian C.
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202270012
Subject(s) - materials science , resistive random access memory , dielectric , dielectric strength , capacitor , scanning transmission electron microscopy , optoelectronics , transmission electron microscopy , oxide , nanotechnology , electrical engineering , voltage , metallurgy , engineering
Dielectric Breakdown Transistors, capacitors, and resistive random‐access memory (RRAM) elements have an oxide film at their heart. In article number 2102313, Brian C. Regan and co‐workers apply scanning transmission electron microscopy (STEM) electron beam‐induced current (EBIC) imaging to RRAM elements cycling in situ. STEM EBIC imaging clearly visualizes otherwise‐invisible dielectric breakdown processes occurring in the nominally insulating oxide film.