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Systematic Design and Demonstration of Multi‐Bit Generation in Layered Materials Heterostructures Floating‐Gate Memory (Adv. Funct. Mater. 43/2021)
Author(s) -
Gwon Oh Hun,
Kim Jong Yun,
Kim Han Seul,
Kang SeokJu,
Byun Hye Ryung,
Park Min,
Lee Dong Su,
Kim Yoonjeong,
Ahn Seokhoon,
Kim Jaekyung,
Cho SangJoon,
Yu YoungJun
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170317
Subject(s) - materials science , heterojunction , optoelectronics , nanotechnology , bit (key) , electronic engineering , computer science , computer security , engineering
Floating‐Gate Memory In article number 2105472, Young‐Jun Yu and co‐workers systematically design and demonstrate multiple bits on non‐volatile memory based on vdW heterostructure floating‐gate memory (FGM) by tuning the dimensions of the 2D materials. A fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered‐material‐based vdW FGMs.