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Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2 (Adv. Funct. Mater. 43/2021)
Author(s) -
Pujar Pavan,
Cho Haewon,
Gandla Srinivas,
Naqi Muhammad,
Hong Seongin,
Kim Sunkook
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170316
Subject(s) - materials science , capacitance , thermionic emission , negative impedance converter , transistor , ferroelectricity , electronics , field effect transistor , optoelectronics , oxide , power (physics) , nanotechnology , engineering physics , electrical engineering , dielectric , electron , thermodynamics , chemistry , electrode , physics , quantum mechanics , voltage , voltage source , metallurgy , engineering
Negative Capacitance In article number 2103748, Sunkook Kim and co‐workers effectively utilize combustion chemistry in solution‐processed ferroelectric‐Hf 0.5 Zr 0.5 O 2 to realize negative capacitance and effectively utilize the same to achieve ultra‐low‐power operation of MoS 2 transistors via sub‐60 mV/dec switching. This is the first study extending the applicability of solution‐processed oxide ferroelectrics to a completely new avenue of high mobility, ultra‐low‐power electronics.