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Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)
Author(s) -
Nam Jae Hyeon,
Oh Seyoung,
Jang Hye Yeon,
Kwon Ojun,
Park Heejeong,
Park Woojin,
Kwon JungDae,
Kim Yonghun,
Cho Byungjin
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170294
Subject(s) - neuromorphic engineering , materials science , plasticity , power consumption , modulation (music) , optoelectronics , power (physics) , computer science , artificial intelligence , physics , artificial neural network , composite material , quantum mechanics , acoustics
Heterosynaptic Plasticity In article number 2104174, Jung‐Dae Kwon, Yonghun Kim, Byungjin Cho, and co‐workers demonstrate a highly reliable 2D MoS 2 /Nb 2 O 5 memtransistor device based on Schottky barrier modulation is demonstrated. The 2D/oxide memtransistor attains dual‐terminal stimulated heterosynaptic plasticity, showing an extremely low power consumption of ≈6 pJ and reliable endurance characteristics over 2000 pulses. Finally, a high pattern recognition accuracy of ≈94.2% is achieved using a pattern recognition simulation, which promotes advanced neuromorphic systems.