Low Power MoS 2 /Nb 2 O 5  Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021) | Zendy

Nam Jae Hyeon | Zendy; Oh Seyoung | Zendy; Jang Hye Yeon | Zendy; Kwon Ojun | Zendy; Park Heejeong | Zendy; Park Woojin | Zendy; Kwon JungDae | Zendy; Kim Yonghun | Zendy; Cho Byungjin | Zendy

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Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)

Author(s) -

Nam Jae Hyeon,

Oh Seyoung,

Jang Hye Yeon,

Kwon Ojun,

Park Heejeong,

Park Woojin,

Kwon JungDae,

Kim Yonghun,

Cho Byungjin

Publication year - 2021

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.202170294

Subject(s) - neuromorphic engineering , materials science , plasticity , power consumption , modulation (music) , optoelectronics , power (physics) , computer science , artificial intelligence , physics , artificial neural network , composite material , quantum mechanics , acoustics

Heterosynaptic Plasticity In article number 2104174, Jung‐Dae Kwon, Yonghun Kim, Byungjin Cho, and co‐workers demonstrate a highly reliable 2D MoS 2 /Nb 2 O 5 memtransistor device based on Schottky barrier modulation is demonstrated. The 2D/oxide memtransistor attains dual‐terminal stimulated heterosynaptic plasticity, showing an extremely low power consumption of ≈6 pJ and reliable endurance characteristics over 2000 pulses. Finally, a high pattern recognition accuracy of ≈94.2% is achieved using a pattern recognition simulation, which promotes advanced neuromorphic systems.

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