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Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe 2 (Adv. Funct. Mater. 36/2021)
Author(s) -
Qiu Haixin,
Herder Martin,
Hecht Stefan,
Samorì Paolo
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170268
Subject(s) - janus , materials science , ternary operation , diarylethene , optoelectronics , ferroelectricity , semiconductor , photochromism , transistor , field effect transistor , layer (electronics) , electric field , nanotechnology , modulation (music) , ripple , dielectric , voltage , electrical engineering , computer science , philosophy , physics , engineering , quantum mechanics , aesthetics , programming language
2D Semiconductors In article number 2102721, Paolo Samorì and co‐workers report ternary‐responsive field‐effect transistors based on few‐layer WSe 2 by decorating its two surfaces with photochromic diarylethene and ferroelectric poly(vinylidene fluoride–trifluoroethylene), respectively. This Janus architecture enables the modulation devices' output current by either light irradiation or an electric field, paving the way for their application as high‐density non‐volatile memories.