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Direct‐Writing of 2D Diodes by Focused Ion Beams (Adv. Funct. Mater. 34/2021)
Author(s) -
Liu Yanran,
Qu Yuanyuan,
Liu Yue,
Yin Hang,
Liu Jinglun,
Tan Yang,
Chen Feng
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170248
Subject(s) - materials science , ion , heterojunction , graphene , ion beam , optoelectronics , diode , irradiation , focused ion beam , beam (structure) , nanotechnology , optics , physics , quantum mechanics , nuclear physics
Focused Ion Beam Writing In article number 2102708, Yang Tan, Feng Chen, and co‐workers present a new method to “print” lateral PN junctions in MoSe 2 /graphene bilayers via ion beam irradiation. Controllable, focused Ga + ions generate Se‐defects on the top of the heterostructures and yield unique electronic properties. This work presents focused ions as an additional strategy for the direct‐writing of elementary electronic devices in 2D materials.