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MXene‐ZnO Memristors: MXene‐ZnO Memristor for Multimodal In‐Sensor Computing (Adv. Funct. Mater. 21/2021)
Author(s) -
Wang Yan,
Gong Yue,
Yang Lin,
Xiong Ziyu,
Lv Ziyu,
Xing Xuechao,
Zhou Ye,
Zhang Bing,
Su Chenliang,
Liao Qiufan,
Han SuTing
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170152
Subject(s) - memristor , materials science , heterojunction , optoelectronics , internet of things , humidity , nanotechnology , conductance , electronic engineering , computer science , embedded system , condensed matter physics , physics , engineering , thermodynamics
In article number 2100144, Su‐Ting Han and co‐workers demonstrate an electro‐humidity‐photoactive memristive device based on a MXene‐ZnO heterojunction. The memristor shows highly repeatable switching features and its conductance can be synergistically modulated by electric, light, and humidity fields, enabling concomitant low‐level in‐sensor processing and high‐level in‐sensor computing.