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Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (Adv. Funct. Mater. 21/2021)
Author(s) -
Achilli Simona,
Le Nguyen H.,
Fratesi Guido,
Manini Nicola,
Onida Giovanni,
Turchetti Marco,
Ferrari Giorgio,
Shinada Takahiro,
Tanii Takashi,
Prati Enrico
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202170151
Subject(s) - materials science , germanium , silicon , ion implantation , ion , surface modification , position (finance) , nanotechnology , optoelectronics , chemistry , organic chemistry , finance , economics
In article number, 2011175, Simona Achilli, Enrico Prati, and co‐workers report on the controlled creation of individual vacancies in silicon by implanting Ge atoms via single ion implantation, the quantum transport model of a disordered 1D array of Ge‐V complexes, and its experimental characterization. Peculiar activation energies are found from cryogenic to room temperature. Image created using ArtBreeder AI agent.