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Kitkaite NiTeSe, an Ambient‐Stable Layered Dirac Semimetal with Low‐Energy Type‐II Fermions with Application Capabilities in Spintronics and Optoelectronics
Author(s) -
Vobornik Ivana,
Sarkar Anan Bari,
Zhang Libo,
Boukhvalov Danil W.,
Ghosh Barun,
Piliai Lesia,
Kuo ChiaNung,
Mondal Debashis,
Fujii Jun,
Lue Chin Shan,
Vorokhta Mykhailo,
Xing Huaizhong,
Wang Lin,
Agarwal Amit,
Politano Antonio
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202106101
Subject(s) - spintronics , dirac fermion , condensed matter physics , semimetal , dirac (video compression format) , physics , fermi level , fermion , fermi energy , materials science , nanotechnology , quantum mechanics , ferromagnetism , band gap , electron , neutrino
The emergence of Dirac semimetals has stimulated growing attention, owing to the considerable technological potential arising from their peculiar exotic quantum transport related to their nontrivial topological states. Especially, materials showing type‐II Dirac fermions afford novel device functionalities enabled by anisotropic optical and magnetotransport properties. Nevertheless, real technological implementation has remained elusive so far. Definitely, in most Dirac semimetals, the Dirac point lies deep below the Fermi level, limiting technological exploitation. Here, it is shown that kitkaite (NiTeSe) represents an ideal platform for type‐II Dirac fermiology based on spin‐resolved angle‐resolved photoemission spectroscopy and density functional theory. Precisely, the existence of type‐II bulk Dirac fermions is discovered in NiTeSe around the Fermi level and the presence of topological surface states with strong (≈50%) spin polarization. By means of surface‐science experiments in near‐ambient pressure conditions, chemical inertness towards ambient gases (oxygen and water) is also demonstrated. Correspondingly, NiTeSe‐based devices without encapsulation afford long‐term efficiency, as demonstrated by the direct implementation of a NiTeSe‐based microwave receiver with a room‐temperature photocurrent of 2.8 µA at 28 GHz and more than two orders of magnitude linear dynamic range. The findings are essential to bringing to fruition type‐II Dirac fermions in photonics, spintronics, and optoelectronics.