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Enhanced Optical Properties and Stability of CsPbBr 3 Nanocrystals Through Nickel Doping
Author(s) -
Kim Hayeong,
Bae SaRang,
Lee Tae Hyung,
Lee Hyoseong,
Kang Heemin,
Park Sungnam,
Jang Ho Won,
Kim Soo Young
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202102770
Subject(s) - materials science , doping , perovskite (structure) , photoluminescence , quantum dot , optoelectronics , light emitting diode , chemical engineering , engineering
To improve the quantum efficiency and stability of perovskite quantum dots, the structural and optical properties are optimized by varying the concentration of Ni doping in CsPbBr 3 perovskite nanocrystals (PNCs). As Ni doping is gradually added, a blue shift is observed at the photoluminescence (PL) spectra. Ni‐doped PNCs exhibit stronger light emission, higher quantum efficiency, and longer lifetimes than undoped PNCs. The doped divalent element acts as a defect in the perovskite structure, reducing the recombination rate of electrons and holes. A stability test is used to assess the susceptibility of the perovskite to light and moisture. For ultra‐violet light irradiation, the PL intensity of undoped PNCs decreases by 70%, whereas that of Ni‐doped PNCs decreases by 18%. In the water addition experiment, the PL intensity of Ni‐doped PNCs is three times that of undoped PNCs. For CsPbBr 3 and Ni:CsPbBr 3 PNCs, a light emitting diode is fabricated by spin‐coating. The efficiency of Ni:CsPbBr 3 exceeds that of CsPbBr 3 PNCs, and the results significantly differ based on the ratio. A maximum luminance of 833 cd m –2 is obtained at optimum efficiency (0.3 cd A –1 ). Therefore, Ni‐doped PNCs are expected to contribute to future performance improvements in display devices.