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Direct‐Writing of 2D Diodes by Focused Ion Beams
Author(s) -
Liu Yanran,
Qu Yuanyuan,
Liu Yue,
Yin Hang,
Liu Jinglun,
Tan Yang,
Chen Feng
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202102708
Subject(s) - materials science , diode , optoelectronics , heterojunction , rectification , fabrication , focused ion beam , graphene , ion beam , nanotechnology , beam (structure) , ion , voltage , electrical engineering , optics , physics , medicine , alternative medicine , pathology , quantum mechanics , engineering
Electronic devices based on 2D materials have exhibited outstanding figures of merit. However, the fabrication of 2D diodes still relies on manual or semi‐automated handling processing. To unleash their commercial potential, the integration of 2D materials into a fully‐automated fabrication line is a critical step. Here, the focused ion‐beam writing as an automated approach to construct lateral diodes on a 2D heterostructure (MoSe 2 /G) consisting of graphene and MoSe 2 is elucidated. Se‐defects generated by focused ion writing endow the 2D heterostructure with unique electronic properties, which allows for the construction of the barrier at the boundary of the writing and non‐writing region. Benefiting from this feature, the ion‐beam‐written heterostructure is used to realize rectifying and current regulating diodes. Exhibiting comparable performance to traditional diodes, the rectifying diode has a rectification ratio of ≈10 4 , while the current regulative diode has a dynamic resistance larger than 4.5 MΩ. Furthermore, to illustrate practical applications of these diodes in digital logic electronics, AND and OR logic gates are directly inscribed on the heterostructure by ion beams. This work demonstrates focused ion‐beam writing as an additional strategy for direct‐writing of 2D diodes on graphene‐based heterostructures.