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Multiple Magnetic Phases in Van Der Waals Mn‐Doped SnS 2 Semiconductor
Author(s) -
Bouzid Houcine,
Sahoo Ramchandra,
Yun Seok Joon,
Singh Kirandeep,
Jin Youngjo,
Jiang Jinbao,
Yoon Duhee,
Song Hyun Yong,
Kim Giheon,
Choi Wooseon,
Kim YoungMin,
Lee Young Hee
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202102560
Subject(s) - materials science , condensed matter physics , van der waals force , magnetoresistance , antiferromagnetism , ferromagnetism , magnetic semiconductor , doping , semiconductor , anisotropy , magnetic field , physics , optoelectronics , optics , quantum mechanics , molecule
2D van der Waals magnetic semiconductors have emerged along with the possibilities of achieving an efficient gate tunability and a proximity effect with a high magnetic anisotropy compared with 3D counterparts. Little explored are multiple magnetic phases with a single crystallographic phase. Herein, the multiple magnetic phases in a Mn‐doped SnS 2 single crystal with different doping concentrations using a one‐step self‐flux method are reported. Two ferromagnetic phases with a canted spin direction exist regardless of the Mn‐doping concentration at up to 5 at%. Antiferromagnetism coexists with the ferromagnetic order and strengthens at high Mn‐doping concentrations. A magnetoresistance measurement conducted on a 2 at% Mn‐SnS 2 flake exhibits a positive‐to‐negative crossover with a value of as high as 50% and clear anisotropy, confirming the presence of ferromagnetic order in the material. By revealing multiple magnetic phases in Mn‐doped SnS 2 , the study broadens the scope of state‐of‐the‐art research on layered magnetic semiconductors.