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Catalyst‐Free Growth of Atomically Thin Bi 2 O 2 Se Nanoribbons for High‐Performance Electronics and Optoelectronics
Author(s) -
Khan Usman,
Tang Lei,
Ding Baofu,
Yuting Luo,
Feng Simin,
Chen Wenjun,
Khan Muhammad Jahangir,
Liu Bilu,
Cheng HuiMing
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202101170
Subject(s) - materials science , monolayer , optoelectronics , nanotechnology , curse of dimensionality , nanostructure , electronics , electrical engineering , engineering , machine learning , computer science
1D materials have attracted significant research interest due to their unique quantum confinement effects and edge‐related properties. Atomically thin 1D nanoribbons are particularly interesting because it is a valuable platform with the physical limits of both thickness and width. Here, a catalyst‐free growth method is developed and the growth of Bi 2 O 2 Se nanostructures with tunable dimensionality is achieved. Significantly, Bi 2 O 2 Se nanoribbons with a thickness down to 0.65 nm, corresponding to a monolayer, are successfully grown for the first time. Electrical and optoelectronic measurements show that Bi 2 O 2 Se nanoribbons possess decent performance in terms of mobility, on/off ratio, and photoresponsivity, suggesting their promise for devices. This work not only reports a new method for the growth of atomically thin nanoribbons but also provides a platform to study properties and applications of such nanoribbon materials at a thickness limit.