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1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis
Author(s) -
Najafidehaghani Emad,
Gan Ziyang,
George Antony,
Lehnert Tibor,
Ngo Gia Quyet,
Neumann Christof,
Bucher Tobias,
Staude Isabelle,
Kaiser David,
Vogl Tobias,
Hübner Uwe,
Kaiser Ute,
Eilenberger Falk,
Turchanin Andrey
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202101086
Subject(s) - heterojunction , materials science , optoelectronics , monolayer , raman spectroscopy , chemical vapor deposition , electroluminescence , photoluminescence , nanotechnology , optics , layer (electronics) , physics
Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in‐plane p–n junctions for sub‐nanometer thin low‐power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one‐pot chemical vapor deposition process yielding MoSe 2 ‐WSe 2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two‐step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High‐resolution transmission electron microscopy further confirms the high‐quality 1D boundary between MoSe 2 and WSe 2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self‐powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated.